30v n-channel enhancement mode mosfet ZXM61N03F summary v (br)dss =30v; r ds(on) =0.22 v ; i d =1.4a description this new generation of high density mosfets from ty utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive sot23 package applications dc - dc converters power management functions disconnect switches motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXM61N03Fta 7 8mm embossed 3000 units ZXM61N03Ftc 13 8mm embossed 10000 units device marking n03 top view sot23 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
ZXM61N03F absolute maximum ratings. parameter symbol limit unit drain-source voltage v dss 30 v gate source voltage v gs 20 v continuous drain current (v gs =10v; t a =25c)(b) (v gs =10v; t a =70c)(b) i d 1.4 1.1 a pulsed drain current (c) i dm 7.3 a continuous source current (body diode) (b) i s 0.8 a pulsed source current (body diode) i sm 7.3 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) r q ja 200 c/w junction to ambient (b) r q ja 155 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t < 5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electrical characteristics (at t a = 25c unless otherwise stated). parameter symbol min. typ.(3) max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 m a, v gs =0v zero gate voltage drain current i dss 1 m a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 m a, v ds = v gs static drain-source on-state resistance (1) r ds(on) 0.22 0.30 w w v gs =10v, i d =0.91a v gs =4.5v, i d =0.46a forward transconductance (3) g fs 0.87 s v ds =10v,i d =0.46a dynamic (3) input capacitance c iss 150 pf v ds =25 v, v gs =0v, f=1mhz output capacitance c oss 35 pf reverse transfer capacitance c rss 15 pf switching (2) (3) turn-on delay time t d(on) 1.9 ns v dd =15v, i d =0.91a r g =6.2 w , r d =16 w (refer to test circuit) rise time t r 2.5 ns turn-off delay time t d(off) 5.8 ns fall time t f 3.0 ns total gate charge q g 4.1 nc v ds =24v,v gs =10v, i d =0.91a (refer to test circuit) gate-source charge q gs 0.4 nc gate-drain charge q gd 0.63 nc source-drain diode diode forward voltage (1) v sd 0.95 v t j =25c, i s =0.91a, v gs =0v reverse recovery time (3) t rr 11.0 ns t j =25c, i f =0.91a, di/dt= 100a/ m s reverse recovery charge (3) q rr 3.5 nc notes (1) measured under pulsed conditions. width 300 m s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. ZXM61N03F product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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